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Artigo de periodico
Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis (2023)
Silva, Wenita de Lima; Toledo, Rodrigo do Nascimento; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CIRCUITOS ANALÓGICOS, NANOTECNOLOGIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Wenita de Lima et al. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, v. 202, p. 1-8, 2023Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2023.108611. Acesso em: 16 maio 2024.
APA
Silva, W. de L., Toledo, R. do N., Gonçalez Filho, W., Nogueira, A. de M., Agopian, P. G. D., & Martino, J. A. (2023). Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis. Solid State Electronics, 202, 1-8. doi:10.1016/j.sse.2023.108611
NLM
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 maio 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Vancouver
Silva W de L, Toledo R do N, Gonçalez Filho W, Nogueira A de M, Agopian PGD, Martino JA. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis [Internet]. Solid State Electronics. 2023 ; 202 1-8.[citado 2024 maio 16 ] Available from: https://doi.org/10.1016/j.sse.2023.108611
Artigo de periodico
Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data (2022)
Toledo, Rodrigo do Nascimento; Silva, Wenita de Lima; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CONDUTIVIDADE ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento et al. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, v. 194, p. 1-4, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2022.108328. Acesso em: 16 maio 2024.
APA
Toledo, R. do N., Silva, W. de L., Gonçalez Filho, W., Nogueira, A. de M., Martino, J. A., & Agopian, P. G. D. (2022). Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, 194, 1-4. doi:10.1016/j.sse.2022.108328
NLM
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 maio 16 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Vancouver
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 maio 16 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Trabalho de evento
Experimental behavior of line-TFET applied to low-dropout voltage regulator (2022)
Silva, Wenita de Lima; Agopian, Paula Ghedini Der ; Martino, João Antonio
Source: SBMICRO: proceedings. Conference titles: Symposium on Microelectronics Technology. Unidade: EP
Subjects: SEMICONDUTORES, ESTABILIDADE, CIRCUITOS ANALÓGICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SILVA, Wenita de Lima e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Experimental behavior of line-TFET applied to low-dropout voltage regulator. 2022, Anais.. [s.L.]: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881041. Acesso em: 16 maio 2024.
APA
Silva, W. de L., Agopian, P. G. D., & Martino, J. A. (2022). Experimental behavior of line-TFET applied to low-dropout voltage regulator. In SBMICRO: proceedings. [s.L.]: IEEE. doi:10.1109/SBMICRO55822.2022.9881041
NLM
Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 maio 16 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041
Vancouver
Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 maio 16 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041

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